Semiconductor device having thermally formed air gap in wiring layer and method of fabricating same

ABSTRACT

A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width as measured from a sidewall of the first wiring layer, and a portion of a thermally degradable material layer formed on the support layer, small space formed between the first and second wiring layers, wherein the small space is smaller than the large space, and a second air gap at least partially fills the small space, and a porous insulating layer formed on the first and second air gaps.

CROSS-REFERENCE TO RELATED PATENT APPLICATIONS

This is a divisional of application Ser. No. 11/859,822 filed on Sep.24, 2007, which is incorporated herein by reference in its entirety.This application claims the benefit of Korean Patent Application No.10-2007-0007919 filed Jan. 25, 2007, the subject matter of which ishereby incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method offabricating same. More particularly, the invention relates to asemiconductor device having an air gap and a method of fabricating same.

2. Description of the Related Art

As semiconductor devices have become more highly integrated, the spacingbetween wires and wiring layers has become minute. An insulating layeris used to separate wiring layers. However, an insulating layer having ahigh dielectric constant tends to increase the capacitance between thewiring layers and may cause signal line delays, thereby decreasing theoperating speed of the constituent semiconductor device.

In order to decrease the capacitance between wiring layers, varioustechnologies have been proposed which use an air gap to insulate (orpartially insulate) wiring layers with a relatively low dielectricconstant. In one such approach, portions of an insulating layerproximate the sidewalls of a via hole are damaged, and the damagedinsulating layers are thereafter removed to form air gaps. However,using this approach, the proportion of the air gaps is very low in theoverall semiconductor device. Alternatively, an insulating layer isformed from a polymer material which is then thermally degraded to forman air gap. However, this approach may cause other material layerswithin the semiconductor device to collapse, thereby decreasing thestructural stability of the device.

SUMMARY OF THE INVENTION

Embodiments of the invention provide a semiconductor device having airgaps adjoining sidewalls of a wiring layer and yet possessing sufficientstructural stability. Embodiments of the invention also provide a methodof fabricating a semiconductor device having air gaps.

In one embodiment, the invention provides a semiconductor devicecomprising a unit wiring level, the unit wiring level comprising; firstand second wiring layers spaced apart from each other on a supportlayer, a large space formed adjacent to the first wiring layer andincluding a first air gap of predetermined width as measured from asidewall of the first wiring layer, and a portion of a thermallydegradable material layer formed on the support layer, small spaceformed between the first and second wiring layers, wherein the smallspace is smaller than the large space, and a second air gap at leastpartially fills the small space, and a porous insulating layer formed onthe first and second air gaps.

In another embodiment, the invention provides a method of fabricating aunit wiring level in a semiconductor device, the method comprising;forming first and second wiring layers separated by a small space on asupport layer, wherein a large space is defined to one side of the firstwiring layer, filling the small and large spaces with portions of athermally degradable material layer, forming a porous insulating layeron the thermally degradable material layer, heating portions of thethermally degradable material layer by applying light radiation to thefirst and second wiring layers, such that a first air gap is formed inthe large space and a second air gap is formed in the small space.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 through 5 are related sectional views illustrating asemiconductor device having an air gap and a method of fabricating sameaccording to an embodiment of the invention;

FIG. 6 is a sectional view provided for comparative purposes with theembodiment shown in FIG. 5;

FIGS. 7 through 11 are related sectional views illustrating asemiconductor device having an air gap and a method of fabricating sameaccording to another embodiment of the invention;

FIG. 12 is a table illustrating the light absorption coefficient, thereflectance, the density, and the specific heat of various materiallayers;

FIG. 13 is a graph illustrating a thermogravimetric analysis (TGA) of athermally degradable material layer used for the present invention;

FIG. 14 is a schematic view of a light radiating apparatus used for thepresent invention; and

FIG. 15 is a table describing examples of a light source of FIG. 14.

DESCRIPTION OF EMBODIMENTS

The present invention will now be described in some additional detailwith reference to the accompanying drawings. The invention may, however,be embodied in many different forms, and should not be construed asbeing limited to only the illustrated embodiments. Rather, theseembodiments are presented as teaching examples. Throughout the drawings,the dimensions of various layers and regions may be exaggerated forclarity of illustration.

A unit wiring level of a semiconductor device according to oneembodiment of the invention includes air gaps adjoining sidewalls ofwiring layers, a large space between wiring layers includes a first airgap corresponding to a predetermined distance from a sidewall of thewiring layers, and a thermally degradable material layer formed on asupport layer. A small space between the wiring layers includes a secondair gap adjoining a sidewall of the wiring layers. Accordingly, asemiconductor device designed and fabricated in accordance with theembodiment of the invention has good structural stability because theproportion of air gaps increases yet other material layers do notcollapse.

One example of a semiconductor device fabricated in accordance with anembodiment of the invention will be described with reference to FIGS. 5and 11. FIGS. 5 and 11 illustrate only a single unit wiring level 50 fora constituent semiconductor device formed on a support layer 10 (e.g., asubstrate). It is understood that one or more additional unit wiringlevels (not shown) may be stacked on unit wiring level 50 of FIGS. 5 and11.

FIG. 5 is a sectional view of a semiconductor device having an air gapaccording to an embodiment of the invention, and FIG. 6 is a sectionalview provided for comparative purposes. FIG. 11 is a sectional view of asemiconductor device having an air gap according to another embodimentof the invention. Throughout the drawings and the accompanying writtendescription, like reference numerals denote like or similar elements.

Referring to FIGS. 5 and 11, the semiconductor device includes first andsecond wiring layers 20 a and 20 b formed respectively inside first andsecond holes 16 a and 16 b selectively exposing portions of supportlayer 10. In one embodiment, support layer 10 is a silicon substrate.First and second holes 16 a and 16 b may be trenches or contact holesformed through unit wiring level 50. When one or more additional unitwiring levels are formed on unit wiring level 50, similar first andsecond holes 16 a and 16 b may serve via holes for connecting thestacked wiring layers. First and second wiring layers 20 a and 20 b mayserve as wiring signal lines, and may be used to interconnect layers orother wiring layers, etc.

First wiring layer 20 a and second wiring layer 20 b are spaced apartfrom each other. In FIGS. 5 and 11, a plurality of wiring layers may beformed on support layer 10, but only two wiring layers are illustratedfor the sake of clarity. A small space SP1 having a relatively smallwidth exists between wiring layers 20 a and 20 b, and a large space SP2having a relatively large width exists between wiring layer 20 b andanother adjacent element (e.g., another wiring layer). That is, anotherwiring layer may be formed to the right of first wiring layer 20 a, butthis element has been omitted from the drawing for the sake of clarity.

First and second wiring layers 20 a and 20 b may be formed (e.g.,) fromcopper, aluminum, a copper alloy, or an aluminum alloy. First and secondbarrier metal layers 18 a and 18 b may be formed respectively on innerwalls of first and second holes 16 a and 16 b. First and second barriermetal layers 18 a and 18 b may be formed at least one material, such asTi, TiN, Ta, TaN or an alloy thereof.

The width of first barrier metal layer 18 a and first wiring layer 20 ais indicated by reference X3, as is the width of second barrier metallayer 18 b and second wiring layer 20 b. However, the width of firstbarrier metal layer 18 a and first wiring layer 20 a may be differentfrom the width of second barrier metal layer 18 b and second wiringlayer 20 b. First and second barrier metal layers 18 a and 18 b may beformed as needed, and may be included in constituent wiring layer(s)generally. Therefore, the term ‘wiring layer’ may subsume the possibleuse of one or more barrier metal layers 18 a and 18 b hereinafter.

First through third air gaps 22 a, 22 b and 22 c having a dielectricconstant of approximately 1 in the illustrated example, may be formed onthe sidewalls of first and second wiring layers 20 a and 20 b. Space SP2having a large width in relation to first wiring layer 20 a includesfirst air gap 22 a indicated by reference X4. First air gap 22 a may beobtained on the sidewall of first wiring layer 20 a by thermallydegrading a portion of material layer 12 a formed on support layer 10.

In this context, thermally degradable material layer 12 a may becompletely removed from the area subsequently occupied by first air gap22 a. However, when the proportion of air gaps is relatively high in asemiconductor device according to an embodiment of the invention,thermally degradable material layer 12 a may be only partially removedproximate first wiring layer 20 a and may otherwise be allowed to remainadjacent to first air gap 22 a. In one embodiment, thermally degradablematerial layer 12 a is formed from a material layer that degrades withapplication of heat.

Space SP1 between first and second wiring layers 20 a and 20 b includessecond air gap 22 b adjoining to the sidewall of second wiring layer 20b. Second air gap 22 b may be formed by a complete removal of thermallydegradable material layer 12 a or a portion of thermally degradablematerial layer 12 a may be allowed to remain within second air gap 22 bwhen the proportion of air gaps is high. That is, second air gap 22 bmay entirely or partially fill the region between the sidewalls ofwiring layers 20 a and 20 b. Second air gap 22 b may be formed to aheight equal to the height of thermally degradable material layer 12 a.Third air gap 22 c may be similarly formed on the sidewall of secondwiring layer 20 b.

In the illustrated example, width X4 of first air gap 22 a may be easilyadjusted, and may be equal to or different from width X5 of second airgap 22 b. In particular, width X4 of first air gap 22 a may be largerthan width X5 of second air gap 22 b, provided that a porous insulatinglayer 14 a formed on first air gap 22 a does not collapse.

In FIG. 5, porous insulating layer 14 a is formed with a uniformthickness on the first through third air gaps 22 a, 22 b and 22 c andthermally degradable material layer 12 a around first and second wiringlayers 20 a and 20 b. In FIG. 11, a porous insulating layer 14 is formedon first through third air gaps 22 a, 22 b and 22 c, thermallydegradable material layer 12 a, and first and second wiring layers 20 aand 20 b. Pores through porous insulating layers 14 and 14 a allow gasmolecules from thermally degradable material layer 12 a to be exhausted.Porous insulating layer 14 a and 14 will be described in some additionaldetail hereafter.

Since a semiconductor device formed in accordance with an embodiment ofthe invention includes first through third air gaps 22 a, 22 b and 22 c,the overall proportion of air gaps within the semiconductor device isincreased to reduced capacitance and avoid any corresponding signaldelay. Also, in large space SP2 of the semiconductor device, whenthermally degradable material layer 12 a is formed including first airgap 22 a between the wiring layers, for example, at the sidewalls offirst wiring layer 20 a, porous insulating layers 14 and 14 a will notcollapse, but will form the structurally stable first air gap 22 a. Alsoin FIG. 11, porous insulating layer 14 is additionally formed on firstand second wiring layers 20 a and 20 b, thereby aiding in the preventionof porous insulating layer 14 structurally collapsing.

However, in the comparative example of FIG. 6, since thermallydegradable material layer 12 a is not allowed to partially remain inlarge space SP2, porous insulating layer 14 a collapses.

Next, a method of fabricating a semiconductor device having air gapsaccording to an embodiment of the invention will be described withreference to FIGS. 1 through 5. In particular, FIGS. 1 through 5illustrate a method of fabricating unit wiring level 50 for asemiconductor device formed on support layer 10.

Referring to FIG. 1, thermally degradable material layer 12 and porousinsulating layer 14 are sequentially formed on support layer 10.Thermally degradable material layer 12 may be formed from a polymermaterial that is degraded (e.g., converted to gaseous form andexhausted) by application of heat. One or more of the following polymers(as selected examples) or a compound including one or more of thefollowing polymers may be used to form degradable material layer 12;Poly(Ethylene Terephthalate) (PET), Polyamide-6,6 (Nylon 6/6),Syndiotactic Polystyrene (PS-syn), Poly(e-caprolactone), Poly PropyleneOxide (PPO), Polycarbonates, Poly Phenylene Sulfide (PPS),Polyamideimide (PAI), Polyphthalamide (PPA), Poly(a-methylstyrene)(PMS), Poly(ether ether ketone (PEEK), Polyether sulfone (PES),Poly(ether ketone) (PEK), Linear Polybutadiene, Branched Polyethylene,Linear Poly(p-phenylene), Branched Poly(p-xylene), Polyacryolonitrile(PAN), and Polystyrene (PS).

Porous insulating layer 14 may be formed from a material having arelatively low dielectric constant, such as a silicon oxide layerincluding carbon (SiOC) or a hydrogenated version of same (SiOC:H).

Referring to FIG. 2, porous insulating layer 14 and thermally degradablematerial layer 12 are selectively etched to form first and second holes16 a and 16 b. As first and second holes 16 a and 16 b are formed,porous insulating layer 14 and thermally degradable material layer 12respectively become a patterned porous insulating layer 14 a and apatterned thermally degradable material layer 12 a. Patterned porousinsulating layer 14 a and patterned thermally degradable material layer12 a are defined in part by space SP1 and space SP2.

Referring to FIG. 3, barrier metal layer 18 is formed on support layer10 including first and second holes 16 a and 16 b. Barrier metal layer18 is formed on the inner walls of first and second holes 16 a and 16 b,the exposed surface of support layer 10, and patterned porous insulatinglayer 14 a. Next, metal layer 20 is formed on barrier metal layer 18 soas to fill first and second holes 16 a and 16 b.

Referring to FIG. 4, metal layer 20 is planarized using patterned porousinsulating layer 14 a as an etch stop layer. Metal layer 20 may beplanarized using a conventional chemical mechanical polishing (CMP)process. Thereafter, a first barrier metal layer 18 a and a first wiringlayer 20 a are formed in first hole 16 a, and a second barrier metallayer 18 b and a second wiring layer 20 b are formed in second hole 16b. Small space SP1 is formed between the first and second wiring layers20 a and 20 b and large space SP2 is formed to the side of first wiringlayer 20 a.

Referring to FIG. 5, portions of thermally degradable material layer 12adjacent to the sidewalls of first and second wiring layers 20 a and 20b are removed to form first through third air gaps 22 a, 22 b and 22 cand to form a patterned thermally degradable material layer 12 a whichpartially remains in at least first air gap 22 a. That is, first air gap22 a is formed with a width X4 measured from the sidewall of firstwiring layer 20 a.

Accordingly, first air gap 22 a is partially formed in large space SP2,second air gap 22 b is formed in small space SP1, and third air gap 22 cis formed at the sidewall of second wiring layer 20 b. Third air gap 22c may be included in either a small or large space.

First through third air gaps 22 a, 22 b and 22 c are formed in oneembodiment by radiating light that is easily absorbed by first andsecond wiring layers 20 a and 20 b. The absorption of radiated lightgenerates thermal energy radiated from first and second wiring layers 20a and 20 b. When applied in this manner, the thermal energy causesthermal degradation of thermally degradable material layer 12 a adjacentto first and second wiring layers 20 a and 20 b. The gas molecules thatresult from thermal conversion of thermally degradable material layer 12a are out-gas through patterned porous insulating layer 14 a. The poresin the porous insulating layer 14 a may be connected with one another ina vertical direction, thus allowing easy exhaust of the gas molecules.

When first and second wiring layers 20 a and 20 b are heated by exposureto light radiation, first through third air gaps 22 a, 22 b and 22 c arelinearly formed by the conducted heat beginning at the heating source,namely first and second wiring layers 20 a and 20 b. A controlledapplication of heat through the light radiation of first and secondwiring layers 20 a and 20 b may be facilitated by an additional heatingof thermally degradable material layer 12 through support 10. That is,thermally degradable material layer 12 may be heated to a point belowits degradation threshold temperature through support 10. Thenapplication of additional heat by light radiation may readily form firstthrough third air gaps 22 a, 22 b and 22 c in a carefully controlledmanner. The heating of support layer 10 and the light radiation will bedescribed in some additional detail hereafter.

In the semiconductor device illustrated in FIG. 5, porous insulatinglayer 14 a does not collapse and first air gap 22 a is stable, while theproportion of air gaps 22 a, 22 b and 22 c is increased in theaggregate, because thermally degradable material layer 12 a is allowedto partially remain in large space SP2. On the other hand, thecomparative structure illustrated in FIG. 6 is not stable and porousinsulating layer 14 a collapses into large space SP2.

One version of unit wiring level 50 for a semiconductor device may becompleted by application of the fabrication processes described withreference to FIGS. 1 through 5. Next, a method of fabricating thesemiconductor device having air gaps according to another embodiment ofthe present invention will be described with reference to FIGS. 7through 11.

Referring to FIG. 7, thermally degradable material layer 12 is againformed on support layer 10.

Referring to FIG. 8, thermally degradable material layer 12 is againselectively etched to form first and second holes 16 a and 16 b. Asfirst and second holes 16 a and 16 b are formed, thermally degradablematerial layer 12 becomes patterned thermally degradable material layer12 a.

Referring to FIG. 9, barrier metal layer 18 is again formed on thesurface of support layer 10 including first and second holes 16 a and 16b. Next, metal layer 20 is formed on barrier metal layer 18 to fillfirst and second holes 16 a and 16 b.

Referring to FIG. 10, metal layer 20 is again planarized using patternedthermally degradable material layer 12 a as an etch stop layer.

Small space SP1 is again formed between first and second wiring layers20 a and 20 b and large space SP2 is formed to the side of first wiringlayer 20 a. Next, porous insulating layer 14 is formed on the entiresurface of patterned thermally degradable material layer 12 a and wiringlayers 20 a and 20 b. Porous insulating layer 14 may be formed aspreviously described.

Referring to FIG. 11, portions of thermally degradable material layer 12adjacent to the sidewalls of first and second wiring layers 20 a and 20b are removed to form first through third air gaps 22 a, 22 b and 22 c.Here, patterned thermally degradable material layer 12 a remains topartially fill first air gap 22 a, such that first air gap 22 a has awidth X4 measured from the sidewall of first wiring layer 20 a.

In FIG. 11, when forming first through third air gaps 22 a, 22 b and 22c, the thermally degraded material is out-gases as described abovethrough porous insulating layer 14. Unit wiring level 50 of thesemiconductor device is now complete on support layer 10.

In the semiconductor device illustrated in FIG. 11, porous insulatinglayer 14 a does not collapse into first air gap 22 a in the area oflarge space SP2, yet the proportion of air gaps 22 a, 22 b and 22 c isincreased because the porous insulating layer 14 is formed on wiringlayers 20 a and 20 b, thereby gaining structural support.

One possible approach to heating the thermally degradable materialthough light radiation of first and second wiring layers 20 a and 20 bwill now be described. This radiative heating process may be expressedby the following equation:

×T∝[α(1−R)]/[ρC],

where ΔT represents the temperature difference before and after lightradiation, α represents the light absorption coefficient of the materiallayer, R represents the reflectance of the material layer, β representsthe density of the material layer, and C represents the specific heat ofthe material layer.

Taking the relationships manifest by this equation into account, thetemperature difference before and after the light radiation isinfluenced more by the light absorption coefficient, the density, andthe specific heat than by the reflectance, and in particular, is greatlyinfluenced by the light absorption coefficient.

FIG. 12 is a table illustrating the light absorption coefficient, thereflectance, the density, and the specific heat for various materialthat might be used to form wiring layers 20 a and 20 b or used inassociation with wiring layers 20 a and 20 b, as well as certaincomparative materials.

An insulating layer such as a silicon oxide layer has a very low lightabsorption coefficient of 1 or less, while a metal layer such as analuminum layer has a very high light absorption coefficient ofapproximately 106, as illustrated in FIG. 12. According to the foregoingequation, a difference in the light absorption coefficient between theinsulating layer and the metal layer is so large that it offsets theeffect of the reflectance. Accordingly, the temperature of the metallayer can increase by selectively heating the metal layer rather than bythe insulating layer using light radiation.

The wavelength of the light radiation may be determined such that thelight is easily absorbed by the metal layer but not by the insulatinglayer, taking the respective light absorption coefficient intoconsideration. The wavelength of light can also be determined dependingon the temperature difference between the insulating layer and the metallayer. In FIG. 12, the wavelength of the applied light was 0.15 μm. As aresult, it has been found that when the wavelength of light is in therange of 1-2 μm or less, for example, 0.5 μm or less, the lightabsorption coefficient of the insulating layer such as a silicon oxidelayer decreases, and that of the metal layer such as an aluminum layerincreases. Accordingly, a light wavelength of 1-2 μm or less, and insome embodiments 0.5 μm or less, may be appropriate for the lightradiation heating described in relation to FIGS. 4 and 5 and FIGS. 10and 11 above.

In FIGS. 4 and 5 and FIGS. 10 and 11, first through third air gaps 22 a,22 b and 22 c may be formed by heating first and second wiring layers 20a and 20 b through light radiation. The temperature difference beforeand after application of the light radiation to first and second wiringlayers 20 a and 20 b is given by the foregoing equation.

Next, the degree of thermal degradation associated with thermallydegradable material layer 12 will be described assuming light radiationconsistent with the foregoing is applied to first and second wiringlayers 20 a and 20 b.

In FIGS. 4 and 5, FIGS. 10 and 11, when first and second wiring layers20 a and 20 b are heated, the heat diffusion period from first andsecond wiring layers 20 a and 20 b into thermally degradable materiallayer 12 should be determined such that a portion of thermallydegradable material layer 12 a remains in first air gap 22 a. In onepossible approach, the heat diffusion period may be calculated accordingto the following equation:

heat diffusion length(δ)=2(χ^(τ))^(1/2),

where χ represents the heat diffusion coefficient of thermallydegradable material layer 12, and τ represents the duration of the lightpulse locally applied to first and second wiring layers 20 a and 20 b.

Taking this relationship into consideration, the heat diffusion periodfrom first and second wiring layers 20 a and 20 b to thermallydegradable material layer 12 may be decreased by reducing the lightpulse duration. In particular, the heat diffusion period from firstwiring layer 20 a to thermally degradable material layer 12, associatedwith the development of width X4 for first air gap 22 a, may bedecreased by reducing the light pulse duration. For example, a heatdiffusion period may be approximately 1 μm when the light pulse durationis one nanosecond, while a heat diffusion period may be approximately 10nm when the light pulse duration is one femtosecond.

Next, a temperature margin will be described for thermally degradablematerial layer 12 when it is heated through first and second wiringlayers 20 a and 20 b by light radiation. As noted above in relation toFIGS. 4 and 5 and FIGS. 10 and 11, certain embodiments of the inventionrequire a precise temperature margin in order to prevent completedegradation of thermally degradable material layer 12 within large spaceSP2 in order to properly form first air gap 22 a.

FIG. 13 is a graph illustrating a thermogravimetric analysis (TGA) of athermally degradable material layer used in one embodiment of theinvention.

In FIG. 13, reference numeral (a) represents the weight ofpolyacrylonitrile (PAN), reference numeral (c) represents the weight ofpolystyrene (PS), and reference numeral (b) represents the weight of agraft polymer of PAN and PS. FIG. 13 illustrates a portion of thermallydegradable material layer 12 used within an embodiment of the invention.Referring to FIG. 13, thermally degradable material layer 12 beginsdegrading around 350° C. as represented by (d), and is completelydegraded at 510° C. as represented by (e). That is, the temperaturemargin of thermally degradable material layer 12 is approximately 160°C., or the difference between (d) and (e). Therefore, the amount ofthermally degradable material layer 12 a remaining adjacent to first airgap 22 a may be controlled according to this temperature margindetermination.

A light radiating apparatus used for heating a thermally degradablematerial layer on support layer 10 by radiating light according to anembodiment of the invention will be described below.

FIG. 14 is a sectional view of a light radiating apparatus used for thepresent invention and FIG. 15 is a table describing examples of a lightsource of FIG. 14.

The light radiating apparatus includes a support member 102 mounting asemiconductor substrate 106 such as a silicon substrate inside anapparatus body 100. A heater 104 is installed for heating thesemiconductor substrate 106 inside support member 102. Heater 104 mayheat the semiconductor substrate 106 using resistive heating. Heater 104may be used to heat support layer 10 identified in relation to FIGS. 4and 5 and FIGS. 10 and 11.

A light source 108 such as a light lamp is positioned over semiconductorsubstrate 106 for radiating light to heat semiconductor substrate 106.Light source 108 may radiate light at various wavelengths. A view port110 for observing light generation is formed on side of light source108. In the illustrated embodiment, an excimer laser may be used.Referring to FIG. 15, the wavelength of the excimer laser may be variedfrom 108 nm to 351 nm, and the photon energy may be varied from 11.48 eVto 3.53 eV.

A window 112 is formed under light source 108 to transfer light 120radiated from light source 108 to semiconductor substrate 106. Light 120may be transferred to semiconductor substrate 106 using light source 108and window 112. As described above, in FIGS. 4 and 5, first and secondwiring layers 20 a and 20 b may be selectively heat by light radiationusing light source 108 and window 112.

The illustrated light radiating apparatus may include a mechanicalshutter 114 between light source 108 and window 112, that is, abovewindow 112. Mechanical shutter 114 opens and closes to control radiationof light 120 from light source 108. The duration of the light pulsetransferred from light source 108 to semiconductor substrate 106 may becontrolled by mechanical shutter 114. In FIGS. 4 and 5 and FIGS. 10 and11, the heat diffusion period from first and second wiring layers 20 aand 20 b to thermally degradable material layer 12 a may be controlledby controlling the light pulse duration.

In the illustrated light radiating apparatus, power may be applied towindow 112 through a power supply 116 to transition window 112 between atransparent state and an opaque state, thereby allowing window 112 toserve as an electrical shutter without the necessity of installingmechanical shutter 114. In such a case, the duration of the light pulsetransferred from light source 108 may be controlled by window 112. Theillustrated light radiating apparatus may also include connecting parts107 and 118 formed at upper and lower portions of body 100 forintroducing a gas atmosphere. Alternatively, connecting parts 107 and118 may be connected to a pump (not shown) for creating a vacuum.

In relation to the embodiments described in FIGS. 4 and 5 and FIGS. 10and 11, when using the illustrated light radiating apparatus, supportlayer 10 may be heated to a predetermined temperature, for example,approximately 300° C., using heater 104, and then thermally degradablematerial layer 12 is additionally heated to its degradation temperatureusing light source 108, window 112, and shutter 114, to thereby remove(or partially remove) thermally degradable material layer 12 to form airgaps 22 a, 22 b and 22 c.

As described above, a semiconductor device of the present invention hasair gaps adjacent to sidewalls of wiring layers, and includes athermally degradable material layer formed on a support layer whileincluding an air gap with a predetermined distance from a sidewall ofthe wiring layer. Therefore, the semiconductor device of the presentinvention has a stable structure since the proportion of air gapsincreases and other material layers formed on the air gaps do notcollapse.

According to a method of fabricating a semiconductor device of thepresent invention, wiring layers are partially heated through lightradiation to thermally degrade a thermally degradable material layer,thereby forming air gaps adjoining sidewalls of the wiring layers. Also,the thermally degradable material layer remains on a support layer suchthat it is spaced from a sidewall of the wiring layer by an air gap. Thewidth of the air gap formed by thermal degradation of the thermallydegradable material layer may be controlled by controlling the lightpulse duration when radiating light.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetail may be made therein without departing from the scope of thepresent invention as defined by the following claims.

1. A semiconductor device comprising a unit wiring level, the unitwiring level comprising: first and second wiring layers spaced apartfrom each other on a support layer; a large space formed adjacent to thefirst wiring layer and including a first air gap of predetermined widthas measured from a sidewall of the first wiring layer, and a portion ofa thermally degradable material layer formed on the support layer; smallspace formed between the first and second wiring layers, wherein thesmall space is smaller than the large space, and a second air gap atleast partially fills the small space; and a porous insulating layerformed on the first and second air gaps.
 2. The semiconductor device ofclaim 1, wherein the porous insulating layer is additionally formed onthe first and second wiring layers.
 3. The semiconductor device of claim1, wherein the first and second air gaps are formed by heating thethermally degradable material layer through light radiation of the firstand second wiring layers.
 4. The semiconductor device of claim 3,wherein the first and second air gaps are additionally formed by heatingof the support layer.
 5. The semiconductor device of claim 1, whereinthe semiconductor device comprises at least two unit wiring levels. 6.The semiconductor device of claim 1, the second air gap entirely fillsthe small space.